Charge stability diagram of serial triple quantum dots

<sec>Serial triple quantum dot (STQD) systems have received extensive attention in the past decade, not only because scaling up is an indispensable ingredient for integrations, but also due to fact that specific charge states of STQD can be employed achieve fast full-electrical manipulation spin qubits. For latter, a comprehensive understanding relationship between neighboring occupancy essential three-electron exchange-only qubit-based computations. Charge stability diagram usually map out occupation about plunger gate voltages STQDs and study degeneracy among states. Experimentally, two- rather than three-dimensional was obtained lot early studies by keeping one gates unchanged reduce complexity. The two-dimensional provide limited information subject blurred boundary low tunneling current energy level broading effects. It is, therefore, challenge searching working points where performed promptly accurately.</sec><sec>In principle, efficiently constructed numerical simulations based on constant interaction (CI) model. In this study, we calculate electrochemical potential three using CI model-based capacitance network reproduce any desired diagram. simulated well accords with diagrams from experimental data STQD, provides high clarity state boundaries tunable parameters. systematical reviews quadruple concludes types compare data. each points, discuss both electron hole transport alignment schematics. We reveal common unique comparison those double dot. are addressed cellular automata logical gate. these guide experiments build optimal point system computations simulations.</sec>